Mohamed Boutchich

Mohamed.Boutchich [at] centralesupelec.fr

Publications :

  • Article dans une revue - 23 documents
    • Chanan Euaruksakul, Hideki Nakajima, Arunothai Rattanachata, Muhammad Hanna, Ahmad. R. T. Nugraha, Mohamed Boutchich. Electronic and Thermoelectric Properties of Graphene on 4H-SiC (0001) Nanofacets Functionalized with F4-TCNQ, 2020-05-15. (https://hal.sorbonne-universite.fr/hal-02884010)
    • Kai-Ping Chang, Kuan-I Ho, Mohamed Boutchich, Julien Chaste, Hakim Arezki, Chao-Sung Lai. Graphene/fluorographene heterostructure for nano ribbon transistor channel, 2019-11-28. (https://hal.archives-ouvertes.fr/hal-02403905)
    • Ulrich Nguétchuissi Noumbé, Charlie Gréboval, Clément Livache, Audrey Chu, Hicham Majjad, Luis Parra López, Louis Donald Notemgnou Mouafo, Bernard Doudin, Stéphane Berciaud, Jean-Francois Dayen, Kai-Ping Chang, Kuan-I Ho, Mohamed Boutchich, Hakim Arezki, Chao-Sung Lai, Jihene Zribi, Biyuan Zheng, José Avila, Thibault Brulé, Maria Asensio, Anlian Pan, Lama Khalil, Evangelos Papalazarou, Mathieu Silly, Fausto Sirotti, Mahmoud Eddrief, Luca Perfetti, Emmanuel Lhuillier, Julien Chaste, Amine Missaoui, Amina Saadani, Daniel Garcia-Sanchez, Debora Pierucci, Zeineb Ben Aziza, Abdelkarim Ouerghi. Nanomechanical Strain Concentration on a Two-Dimensional Nanobridge within a Large Suspended Bilayer Graphene for Molecular Mass Detection, 2018-11-14. (https://hal.archives-ouvertes.fr/hal-03031424)
    • Chaoyu Chen, José Avila, Hakim Arezki, van Luan Nguyen, Jiahong Shen, Marcin Mucha-Kruczyński, Fei Yao, Mohamed Boutchich, Yue Chen, Young Hee Lee, Maria Asensio. Large local lattice expansion in graphene adlayers grown on copper, 2018-05. (https://hal-centralesupelec.archives-ouvertes.fr/hal-02401969)
    • Keiki Fukumoto, Mohamed Boutchich, Hakim Arezki, Ken Sakurai, Daniela Di Felice, Yannick J. Dappe, Ken Onda, Shin-Ya Koshihara. Ultrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopy, 2017-11. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01631643)
    • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements, 2017-09. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01631793)
    • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence, 2017-06. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01631792)
    • Chaoyu Chen, José Avila, Hakim Arezki, Fei Yao, van Luan Nguyen, Young Hee Lee, Mohamed Boutchich, Maria C. Asensio. Structural and electronic inhomogeneity of graphene revealed by Nano-ARPES, 2017-06-01. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01631649)
    • Jer-Chyi Wang, Kai-Ping Chang, Chih-Ting Li, Ching-Yuan Su, Fethullah Güneş, Mohamed Boutchich, Chang-Hsiao Chen, Ching-Hsiang Chen, Ching-Shiun Chen, Lain-Jong Lai, Chao-Sung Lai. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications, 2017-03-01. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01428626)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, Pere Roca I Cabarrocas, Jean-Paul Kleider, Fei Yao, Young Hee Lee. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures, 2016-10. (https://hal.archives-ouvertes.fr/hal-01363551)
    • Haikel Sediri, Debora Pierucci, Mahdi Hajlaoui, Hugo Henck, Gilles Patriarche, Yannick J. Dappe, Sheng Yuan, Bérangère Toury, Rachid Belkhou, Mathieu G. Silly, Fausto Sirotti, Mohamed Boutchich, Abdelkarim Ouerghi. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure, 2015-11-20. (https://hal.sorbonne-universite.fr/hal-01257768v2)
    • Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, Laurent Montes, Chao-Sung Lai. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering, 2015-11. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01257741)
    • Fethullah Günes, Hakim Arezki, Debora Pierucci, David Alamarguy, José Alvarez, Jean-Paul Kleider, Yannick J. Dappe, Abdelkarim Ouerghi, Mohamed Boutchich. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid, 2015-11. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01244484)
    • Songphol Kanjanachuchai, Ming Xu, Alexandre Jaffré, Apichart Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich. Excitation transfer in stacked quantum dot chains, 2015-05. (https://hal.archives-ouvertes.fr/hal-01257798)
    • R. Othmen, H. Arezki, H. Ajlani, A. Cavanna, M. Boutchich, M. Oueslati, A. Madouri. Direct transfer and Raman characterization of twisted graphene bilayer, 2015-03. (https://hal.archives-ouvertes.fr/hal-01257805)
    • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich, Songphol Kanjanachuchai. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots, 2015-01-01. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01239179)
    • Hakim Arezki, Kuan-I Ho, Alexandre Jaffré, David Alamarguy, J Alvarez, Jean-Paul Kleider, Chao-Sung Lai, Mohamed Boutchich. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001), 2015-01-01. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01239163)
    • M. Boutchich, H. Arezki, D. Alamarguy, K.-I. Ho, H. Sediri, F. Güneş, J. Alvarez, J. P. Kleider, C. S. Lai, A. Ouerghi. Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate, 2014-12. (https://hal-supelec.archives-ouvertes.fr/hal-01099354)
    • José Alvarez, M. Boutchich, Jean-Paul Kleider, T. Teraji, Y. Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging, 2014-09. (https://hal-supelec.archives-ouvertes.fr/hal-01099593)
    • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, Y. Tanizawa, R. Tero, H. Okada, T.V. Thu, Jean-Paul Kleider, A. Sandhu. Characterization of graphene oxide reduced through chemical and biological processes, 2013-01. (https://hal-supelec.archives-ouvertes.fr/hal-00931274)
    • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, Meiyong Liao, Imura Masataka, Yasuo Koide, Jean-Paul Kleider. Amorphous silicon diamond based heterojunctions with high rectification ratio, 2012-09. (https://hal-supelec.archives-ouvertes.fr/hal-00778949)
    • M. Boutchich, K. Ziouche, M. Ait-Hammouda Yala, P. Godts, Delphine Leclercq. Package-free infrared micro sensor using polysilicon thermopile, 2005. (https://hal.archives-ouvertes.fr/hal-00125621)
    • M. Boutchich, K. Ziouche, P. Godts, Delphine Leclercq. Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K, 2002. (https://hal.archives-ouvertes.fr/hal-00148729)
  • POSTER - 6 documents
    • R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements, 2017-04-03. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01632914)
    • M. Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, Jean-Paul Kleider. Photoluminescence techniques for heterojunction solar cell characterization, 2014-12-02. (https://hal-supelec.archives-ouvertes.fr/hal-01099349)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, José Alvarez, Jean-Paul Kleider, Abdelkarim Ouerghi. Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001), 2014-11-06. (https://hal-supelec.archives-ouvertes.fr/hal-01104496)
    • Ming Xu, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Apichat Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich, Songphol Kanjanachuchai. Spatially resolved photoluminescence on multi stack InAs quantum dots, 2014-11-06. (https://hal-supelec.archives-ouvertes.fr/hal-01104500)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, José Alvarez, Pere Roca I Cabarrocas Roca I Cabarrocas, Jean-Paul Kleider, Y. Fei, Y. Hee Lee. Engineering of CVD graphene optoelectronic properties Application as transparent electrode in solar cells, 2014-08-24. (https://hal-supelec.archives-ouvertes.fr/hal-01104502)
    • Fethullah Gunes, David Alamarguy, Hakim Arezki, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Mohamed Boutchich. Nitric Acid doping of epitaxial graphene on SiC (0001) substrate, 2014-05-06. (https://hal-supelec.archives-ouvertes.fr/hal-01104503)
  • Communication dans un congrès - 29 documents
    • Hakim Arezki, Mohamed Boutchich, Alexandre Jaffré, J Alvarez, Julien Chaste, Jean-Paul Kleider, Gilles Patriarche. Probing the electronic properties of CVD graphene superlattices, 2016-09-09. (https://hal.archives-ouvertes.fr/hal-01533988)
    • Keiki Fukumoto, Hakim Arezki, Ken Onda, Shin-Ya Koshihara, Mohamed Boutchich. Spatio-temporal observation of photogenerated electron dynamics in twisted graphene, 2016-07-26. (https://hal.archives-ouvertes.fr/hal-01363553)
    • David Alamarguy, Hakim Arezki, Fethullah Gunes, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Mohamed Boutchich. Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de Photoélectrons, 2016-05-23. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01449031)
    • Mohamed Boutchich. Probing and Modulation of the electronic properties of graphene for heterostructures, 2015-12-22. (https://hal.archives-ouvertes.fr/hal-01257875)
    • Mohamed Boutchich. Graphene and beyond for heterojunctions - Research opportunities, 2015-10-21. (https://hal.archives-ouvertes.fr/hal-01257922)
    • Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, Pere Roca I. Cabarrocas, Jean-Paul Kleider. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence, 2015-09-13. (https://hal-centralesupelec.archives-ouvertes.fr/hal-01239190)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, J Alvarez, Pere Roca I. Cabarrocas, Jean-Paul Kleider, Fei Yao, Young Hee Lee. Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon, 2015-09-13. (https://hal.archives-ouvertes.fr/hal-01232115)
    • Mohamed Boutchich, Jean-Paul Kleider, Abdelkarim Ouerghi, Hong-Lee Younghee, Young Hee Lee, P.Roca I Cabarrocas, Chaoyu Chen, Jose Ávila, Asensio Maria-Carmen. Characterization of graphene and applications to heterojunctions, 2015-09-09. (https://hal.archives-ouvertes.fr/hal-01257911)
    • Alexandre Jaffré, Hakim Arezki, Mohamed Boutchich, J Alvarez, Jean-Paul Kleider. Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scale, 2015-08-04. (https://hal.archives-ouvertes.fr/hal-01259190)
    • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich, Songphol Kanjanachuchai. Spatially resolved photoluminescence on multi stack InAs quantum dots, 2015-08-04. (https://hal.archives-ouvertes.fr/hal-01257898)
    • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider, J Alvarez, David Alamarguy, Fethullah Gunes, Debora Pierucci. Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001), 2015-07-20. (https://hal.archives-ouvertes.fr/hal-01257881)
    • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider. Raman spectroscopy on Bi and Trilayer flakes of graphene, 2015-02-05. (https://hal.archives-ouvertes.fr/hal-01232095)
    • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, Fethullah Gunes, José Alvarez, Jean-Paul Kleider, Chao-Sung Lai, Abdelkarim Ouerghi. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001), 2014-11-06. (https://hal-supelec.archives-ouvertes.fr/hal-01104492)
    • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, Fethullah Gunes, José Alvarez, Jean-Paul Kleider, C.S. Lai, A. Ouerghi. Doping and characterization of trilayer graphene on 4H-SiC (0001), 2014-11-04. (https://hal-supelec.archives-ouvertes.fr/hal-01104494)
    • Adarsh Sandhu, Hiroshi Okada, Mohamed Boutchich, Shinya Maenosono, Renu Wadhwa. Preface: The Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society, 2014-10-06. (https://hal.archives-ouvertes.fr/hal-02401926)
    • M. Xu, Mohamed Boutchich, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Nazir P. Kherani, Basia Halliop. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELL, 2014-09-22. (https://hal-supelec.archives-ouvertes.fr/hal-01099586)
    • Zakaria Djebbour, Walid Elhuni, Anne Migan-Dubois, Mohamed Boutchich, Jean-Paul Kleider, S. Franger, D. J. Rogers, K. Pantzas, A. Ougazzaden. Research & Partnership opportunities in III-V on Si at LGEP and Supélec, 2014-06-16. (https://hal-supelec.archives-ouvertes.fr/hal-01099358)
    • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, Jean-Paul Kleider. Photoluminescence techniques for heterojunction solar cell characterization, 2013-12-03. (https://hal-supelec.archives-ouvertes.fr/hal-00931327)
    • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, Jean-Paul Kleider. Photoluminescence techniques for heterojunction solar cell characterization, 2013-12-02. (https://hal-supelec.archives-ouvertes.fr/hal-00931326)
    • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, Y. Tanizawa, R. Tero, H. Okada, T.V. Thu, Jean-Paul Kleider, A. Sandhu. Graphene oxide reduced through chemical and biological processes, 2012-11-15. (https://hal-supelec.archives-ouvertes.fr/hal-00779022)
    • José Alvarez, Mohamed Boutchich, Djicknoum Diouf, Jean-Paul Kleider, M. Liao, M. Imura, Y. Koide. Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cells, 2012-03-23. (https://hal-supelec.archives-ouvertes.fr/hal-00779008)
    • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, M Liao, I. Masataka, Y Koide, Jean-Paul Kleider. Amorphous and microcrystalline silicon diamond based heterojunctions, 2011-08. (https://hal-supelec.archives-ouvertes.fr/hal-00710772)
    • K. Ziouche, M. Boutchich, M. Achani, P. Godts, Delphine Leclercq. A new infrared microsensor, 2003. (https://hal.archives-ouvertes.fr/hal-00146386)
    • K. Ziouche, M. Boutchich, D. Bernard-Loridant, P. Godts, Delphine Leclercq. A new ultra-violet microradiometer, 2001. (https://hal.archives-ouvertes.fr/hal-00152186)
    • K. Ziouche, M. Boutchich, P. Godts, Delphine Leclercq. Méthode de mesure de l'absorptivité différentielle de 2 matériaux. Application en UV et IR, 2001. (https://hal.archives-ouvertes.fr/hal-00152207)
    • P. Godts, K. Ziouche, M. Boutchich, Delphine Leclercq. Thermoelectric infrared microsensor using suspended membranes made by silicon micromachining, 2001. (https://hal.archives-ouvertes.fr/hal-00152189)
    • Delphine Leclercq, K. Ziouche, M. Boutchich, P. Godts. New developments on IR distribution-patterned microradiometers family, 2001. (https://hal.archives-ouvertes.fr/hal-00152188)
    • K. Ziouche, M. Boutchich, P. Godts, Delphine Leclercq. Réalisation de nouveaux microradiomètres sur silicium. Etude des propriétés thermoélectriques du polysilicium dopé N et P, 2001. (https://hal.archives-ouvertes.fr/hal-00152208)
    • K. Ziouche, M. Boutchich, D. Bernard-Loridant, P. Godts, Delphine Leclercq. Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle, 2000. (https://hal.archives-ouvertes.fr/hal-00158491)
  • HDR - 1 document
  • PATENT - 1 document
    • Mohamed Boutchich, Chao-Sung Lai, Abdelkarim Ouerghi, Kuan-I Ho. Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric element, 2016-02-12. (https://hal.archives-ouvertes.fr/hal-01814906)
  • Autre publication - 1 document